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| SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors DESCRIPTION *With TO-220C package *DARLINGTON *High DC current gain *Low collector saturation voltage *Complement to type TIP100/101/102 APPLICATIONS *For industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP105/106/107 ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER TIP105 VCBO Collector-base voltage TIP106 TIP107 TIP105 VCEO Collector-emitter voltage TIP106 TIP107 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-peak Base current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -8 -15 -1 80 2 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP105 VCEO(SUS) Collector-emitter sustaining voltage TIP106 TIP107 VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage TIP105 ICBO Collector cut-off current TIP106 TIP107 TIP105 ICEO Collector cut-off current TIP106 TIP107 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=-3A ,IB=-6mA IC=-8A ,IB=-80mA IC=-8A ; VCE=-4V VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-4V IC=-8A ; VCE=-4V IE=0 ; VCB=-10V,f=0.1MHz IC=-30mA, IB=0 CONDITIONS SYMBOL TIP105/106/107 MIN -60 -80 -100 TYP. MAX UNIT V -2.0 -2.5 -2.8 V V V -50 A -50 A -2 1000 200 300 20000 mA pF 2 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE TIP105/106/107 Fig.2 Outline dimensions (unindicated tolerance:0.1mm) 3 |
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